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Home - Freescale marks advance in nanocrystal memory technology
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Freescale marks advance in nanocrystal memory technology

by RCR Wireless News November 28, 2005
written by RCR Wireless News November 28, 2005 Share
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AUSTIN, Texas-Freescale Semiconductor Inc. announced it has manufactured 24-megabit silicon nanocrystal memory technology, bringing next-generation non-volatile embedded memories closer to production.

The company explained that non-volatile memory technology is denser, faster and more cost-effective than conventional floating gate-based flash memory technology. In addition, Freescale noted that silicon nanocrystal memories are part of an advanced class of memory technologies called thin-film storage, which is more scaleable than conventional floating gate-based flash technology.

“The industry anticipates that conventional embedded flash memory technology will reach its scaling limit within the next four years due to high-operating voltage, fabrication process complexity and cost,” said Claudine Simson, chief technology officer at Freescale. “A viable alternative is crucial for key suppliers to automotive, wireless and consumer markets to continue to scale their products and add new functionality. Silicon nanocrystal technology offers lower operating voltages, reduced memory module size, simpler process flow and lower manufacturing costs. Additionally, it requires no new materials or wafer fabrication equipment, allowing for immediate compatibility with existing production wafer fabs.”

Freescale became a publicly traded company in July 2004 after more than 50 years as part of Motorola Inc. The company had sales of $5.7 billion in 2004.

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