DENVER-Newly formed UltraRF, the former semiconductor division of Spectrian Corp., announced a new amplifier integration technology, in addition to details of its focus as an autonomous business unit.
UltraRF produces laterally diffused metal oxide silicon and bipolar transistors. The company will begin U.S. beta testing in December of RF power modules that incorporate low-temperature co-fired ceramic technology, which allows high integration efficiency and cost savings to carriers, said John Quinn, UltraRF vice president.
LTCC technology allows previously open elements of a circuit board to be hermetically sealed, making the units more rugged and durable. Therefore, the 50-and 100-watt modules potentially allow the RF power generation to be located at the top of the tower vs. the bottom, saving transmission line losses and associated power costs. The RF power modules will be available commercially in April 2000, said Quinn.
“Carriers should be pulling on the manufacturers to develop higher efficiency systems based on such products,” said Quinn.
UltraRF plans to capitalize on the semiconductor market, which is increasing rapidly in light of the growing influence of wireless data, said Chris Tubis, UltraRF president.
Quinn said the fact that the company, which counts among its competitors L.M. Ericsson and Motorola Inc., was formerly part of Spectrian will provide the biggest challenge for selling product to other power amplifier manufacturers. “However, we’re already signing NDAs (nondisclosure agreements) with Spectrian competitors,” said Quinn.
