Black Sand Technologies, Inc., a fabless semiconductor company specializing in advanced power amplifier technology for wireless applications, announced that it has produced the world’s first 3G CMOS RF Power Amplifier (PA). Black Sand’s proprietary CMOS PA architecture offers a breakthrough in combined performance, cost, battery life, and reliability for mobile devices such as mobile phones and datacards. The company also announced today that it has received US$10 million in its second round of funding. The round was led by Northbridge Venture Partners and joined by Austin Ventures, bringing the total investment in the company to US$18.2 million. Black Sand will use the funding to bring its power amplifiers into mass production and accelerate development of additional products. Read more at http://budurl.com/blksd
Black Sand Technologies Announces World’s First 3G Cmos RF Power Amplifier, Closes $10m Series B Financing
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What infra upgrades are needed to handle AI energy spikes?
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The IEA report predicts that AI processing in the U.S. will need more electricity than all heavy industries combined, such as steel, cement and chemicals
Energy demand for AI data centers in the U.S. is expected to grow about 50 gigawatt each year for the coming years, according to Aman Khan, CEO of International Business Consultants